We offer high quality growth of  III-V materials by molecular-beam epitaxy. The MBE facility offers materials composed of Ga, Al, In, As, Si and Be. Binary and ternary compounds with high precision doping can be grown. Growth accuracy of  one atomic layer at a time is our standard. We offer the highest standards and excellent expertise in growth of complex heterostructures and devices. Please be advised that the growth of materials is subject to the U.S. Government standards for export control. Please contact laboratory staff for more information.