Current - Voltage Measurements (I-V)

Current-voltage measurements are offered for standard semiconductor devices such as Schottky and p-n diodes, transistors, photodetectors, solar cells, etc. The measurements can be done for two or four terminal geometries. We are using sensitive electronics from Keithley and Hewlett Packard which allow us to make DC and pulsed I-V measurements. Temperature dependent I-V measurements can be done on request. Please contact laboratory staff for more information.




Capacitance - Voltage Measurements (C-V)

Capacitance-voltage measurements can be offered to test Schottky diodes,  p-n, p-i-n diodes, solar cells, etc. The capacitance measurements can be done at 10 kHz and 1 MHz test frequencies using Keithley or Hewlett Packard capacitance meters. Temperature dependent measurements can be done on request. Please contact laboratory staff for more information.





Low-Frequency Noise Measurements (LFN)

Low-frequency noise measurements are offered for two or four terminal devices. Our specially designed noise measurement setup allows measurements as a function of electric field at constant temperature or  as a function of temperature at constant electric field.  The first type of measurements allows us to study noise characteristics of the devices, while  the second type reveals deep energy states in the band gap of the semiconductor. The frequency range from 1 Hz up to 100 kHz is covered. Please contact laboratory staff for more information.



Temperature Stimulated Capacitance (TSCAP)

Temperature dependent capacitance scans can be offered to study defects in p-n, p-i-n or Schottky diode  structures. This technique is a complimentary tool for deep level transient spectroscopy (DLTS). The measurements are performed at 1 MHz test frequency. Please contact laboratory staff for more information.